technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn silicon switching transistor qualified per mil-prf-19500/399 t4-lds-0161 rev. 1 (100514) page 1 of 4 devices levels 2N3960 2N3960ub jan jantx jantxv absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditio ns symbol value unit collector-emitter voltage v ceo 12 vdc collector-base voltage v cbo 20 vdc emitter-base voltage v ebo 4.5 vdc total power dissipation @ t a = +25c p t (1) 0.4 w operating & storage junction temperature range t op , t stg -65 to +200 c note: derate linearly 2.3mw/c above t a = +25c electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics collector-emitter breakdown voltage i c = 10 adc v (br)ceo 12 vdc collector-base cutoff current v cb = 20vdc i cbo 10 adc emitter-base cutoff current v eb = 4.5vdc i ebo 10 adc collector-emitter cutoff current v ce = 10vdc, v be = 0.4vdc v ce = 10vdc, v be = 2.0vdc i cex1 i cex2 1 5 adc adc to-18 ? 2N3960 ub ? 2N3960ub
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com t4-lds-0161 rev. 1 (100514) page 2 of 4 electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit on characteristics forward-current transfer ratio i c = 1madc, v ce = 1vdc 40 i c = 10madc, v ce = 1vdc 60 300 i c = 30madc, v ce = 1vdc h fe 30 collector-emitter saturation voltage i c = 1.0madc, i b = 0.1madc i c = 30madc, i b = 3.0madc v ce(sat) 0.2 0.3 vdc base-emitter saturation voltage v ce = 1.0vdc, i c = 1.0madc v ce = 1.0vdc, i c = 3.0madc v be(sat) 0.8 1.0 vdc dynamic characteristics parameters / test conditions symbol min. max. unit magnitude of small ? signal short ? circuit - forward current transfer ratio i c = 5.0madc, v ce = 4vdc, f = 100mhz i c = 10.0madc, v ce = 4vdc, f = 100mhz i c = 30.0madc, v ce = 4vdc, f = 100mhz |h fe | 13 14 12 output capacitance v cb = 4vdc, i e = 0, 100khz f 1.0mhz c obo 2.5 pf input capacitance v eb = 0.5vdc, i c = 0, 100khz f 1.0mhz c ibo 2.5 pf
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com t4-lds-0161 rev. 1 (100514) page 3 of 4 package dimensions notes: 1. dimensions are in inches. * 2. millimeters are given for general information only. 3. symbol tl is measured from hd maximum. 4. details of outline in this zone are optional. 5. symbol cd shall not vary more than .010 (0.25 mm) in zone p. this zone is controlled for automatic handling. 6. leads at gauge plane .054 (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) relative to tab. device may be measured by direct methods or by gauge. 7. symbol ld applies between l 1 and l 2 . dimension ld applies between l 2 and ll minimum. 8. lead number three is electrically connected to case. 9. beyond r maximum, tw shall be held for a minimum length of .011 inch (0.28 mm). 10. symbol r applied to both inside corners of tab. 11. measured in a zone beyond .250 (6.35 mm) from the seating plane. 12. measured in the zone between .050 (1.27 mm) and .250 (6.35mm) from the seating plane. * 13. in accordance with asme y14.5m, diameters are equivalent to x symbology. * 14. lead 1 = emitter, lead 2 = base, and case is collector. *figure 1. physical dimensions (similar to to-18) dimensions symbol inches millimeters note min max min max cd .178 .195 4.52 4.95 ch .170 .210 4.32 5.33 hd .209 .230 5.31 5.84 lc .100 tp 2.54 tp 6 ld .016 .021 0.41 0.53 7,11 ll .500 .750 12.70 19.05 7 lu .016 .019 0.41 0.48 12 l 1 .050 1.27 7 l 2 .250 6.35 7 p .100 2.54 5 q .040 1.02 4 tl .028 .048 0.71 1.22 3 tw .036 .046 0.91 1.17 9 r .010 0.25 10 45 tp 45 tp 6
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com t4-lds-0161 rev. 1 (100514) page 4 of 4 dimensions dimensions symbol inches millimeters note symbol inches millimeters note min max min max min max min max bh .046 .056 1.17 1.42 ls 1 .036 .040 0.91 1.02 bl .115 .128 2.92 3.25 ls 2 .071 .079 1.81 2.01 bw .085 .108 2.16 2.74 lw .016 .024 0.41 0.61 cl .128 3.25 r .008 .203 cw .108 2.74 r 1 .012 .306 ll 1 .022 .038 0.56 0.96 r 2 .022 .559 ll 2 0.17 .035 0.43 0.89 notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. hatched areas on package denote metalized areas. 4. lid material: kovar. 5. pad 1 = base, pad 2 = emitter, pad 3 = collector, pad 4 = shielding connected to the lid. 6. in accordance with asme y14.5m , diameters are equivalent to x symbology. figure 2. physical dimensi ons, 2N3960ub, surface mount
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